DatasheetsPDF.com

6604

Tuofeng Semiconductor
Part Number 6604
Manufacturer Tuofeng Semiconductor
Description 20V Complementary MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6604 20V Complementary MOSFET Product Summary N-Channel VDS= 20V ID=...
Datasheet PDF File 6604 PDF File

6604
6604

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 6604 20V Complementary MOSFET Product Summary N-Channel VDS= 20V ID= 3.
4A (VGS=4.
5V) RDS(ON) < 65mΩ (VGS=4.
5V) < 75mΩ (VGS=2.
5V) < 100mΩ (VGS=1.
8V) P-Channel -20V -2.
5A (VGS=-4.
5V) RDS(ON) < 75mΩ (VGS=-4.
5V) < 105mΩ (VGS =-2.
5V) < 180mΩ (VGS=-1.
8V) Top View D1 D2 G1 1 S2 2 G2 3 6 D1 5 S1 4 D2 G1 G2 S1 S2 n-channel p-channel Absolute Maximum Ratings T =25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Max n-channel 20 ±8 Continuous Drain Current TA=25°C Pulsed Drain Current C ID 3.
4 IDM 13 Max p-channel -20 ±8 -2.
5 -13 Power Dissipation B TA=25°C Junction and Storage Temperature Range PD TJ, TSTG 1.
1 1.
1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units V V A W °C Units °C/W °C/W °C/W Page 1 of 9 Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 6604 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ Max Units 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V 1 µA IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±8V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V ±100 0.
4 0.
7 1 13 nA V A RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=3.
4A VGS=2.
5V, ID=3A 51 65 58 75 mΩ mΩ VGS=1.
8V, ID=2A 68 100 mΩ gFS Forward Transconductance VSD Diode Forward Voltage VDS=5V, ID=3.
4A IS=1A,VGS=0V 16 0.
7 1 S V IS Maximum Body-Diode Continuous Current 1.
5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 205 260 320 33 48 63 pF pF Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 16 27 38 1.
5 3 4.
5 pF Ω SWITC...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)