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MTE50N10QE3

Cystech Electonics
Part Number MTE50N10QE3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Aug 30, 2016
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE50N10QE3 Spec. No. : C168E3 Issued Date : 2016.06....
Datasheet PDF File MTE50N10QE3 PDF File

MTE50N10QE3
MTE50N10QE3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTE50N10QE3 Spec.
No.
: C168E3 Issued Date : 2016.
06.
24 Revised Date : Page No.
: 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.
5A 26.
4 mΩ(typ) Symbol MTE50N10QE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE50N10QE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE50N10QE3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C168E3 Issued Date : 2016.
06.
24 Revised Date : Page No.
: 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.
1mH, ID=29 Amps, VDD=50V (Note 4) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) Power Dissipation TC=100°C TA=25°C (Note 1) (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.
063 in(1.
6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDSM IDM IAS EAS EAR PD PDSM TL Limits 100 ±20 29* 20.
5* 5.
5 4.
4 116* 29 42 6 60 30 2.
1 1.
4 300 TPKG 260 Tj, Tstg -55~+175 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junct...


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