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MTB050P10H8

Cystech Electonics
Part Number MTB050P10H8
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 1/11 P-Channel Enhance...
Datasheet PDF File MTB050P10H8 PDF File

MTB050P10H8
MTB050P10H8

Overview
CYStech Electronics Corp.
Spec.
No.
: C975H8 Issued Date : 2016.
08.
01 Revised Date : Page No.
: 1/11 P-Channel Enhancement Mode Power MOSFET MTB050P10H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.
5V, ID=-12A -100V -20A -4.
4A 39.
5mΩ 45.
3mΩ Symbol MTB050P10H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB050P10H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB050P10H8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C975H8 Issued Date : 2016.
08.
01 Revised Date : Page No.
: 2/11 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V (Note1) Continuous Drain Current @ TC=100°C, VGS=-10V (Note1) Continuous Drain Current @ TA=25°C, VGS=-10V (Note2) Continuous Drain Current @ TA=70°C, VGS=-10V (Note2) Pulsed Drain Current (Note3) Avalanche Current@L=1mH (Note4) Avalanche Energy @ L=2mH, ID=-20A, VDD=-50V (Note4) TC=25℃ (Note1) Total Power Dissipation TC=100℃ TA=25°C (Note1) (Note2) TA=70°C (Note2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM Tj, Tstg 10s Steady State -100 ±20 -20 -12.
7 -7.
4 -4.
4 -5.
9 -3.
5 -80 -20 400 42 16.
8 5.
4 1.
9 3.
4 1.
2 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (Note2) t≤10s Steady State Symbol Rth,j-c Rth,j-a Typical 2.
5 18 50 Maximum 3 23 65 Unit °C/W Note : 1.
The power d...


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