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MTB5D0C03J4

Cystech Electonics
Part Number MTB5D0C03J4
Manufacturer Cystech Electonics
Description N- and P-channel enhancement mode power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C704J4 Issued Date : 2016.06.02 Revised Date : 2016.06.03 Page No. : 1/13 N & P-...
Datasheet PDF File MTB5D0C03J4 PDF File

MTB5D0C03J4
MTB5D0C03J4

Overview
CYStech Electronics Corp.
Spec.
No.
: C704J4 Issued Date : 2016.
06.
02 Revised Date : 2016.
06.
03 Page No.
: 1/13 N & P-Channel Enhancement Mode Power MOSFET MTB5D0C03J4 Features  Low Gate Charge  Simple Drive Requirement  RoHS compliant & Halogen-free package BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C RDSON(typ.
) @VGS=(-)10V RDSON(typ.
) @VGS=(-)4.
5V N-CH 30V 8.
6A 33.
5A 6.
7 mΩ 8.
3 mΩ P-CH -30V -6.
8A -26.
5A 13.
4 mΩ 20.
1 mΩ Equivalent Circuit MTB5D0C03J4 Outline TO-252-4L Tab D1/D2 G：Gate D：Drain S：Source G2 S2 G1 S1 Absolute Maximum Ratings (TA=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TC=100C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TA=25C, VGS=10V(-10V) (Note4) Continuous Drain Current @ TA=70C, VGS=10V(-10V) (Note4) Pulsed Drain Current *1 (Note3) Single Pulse Avalanche Current @ L=0.
1mH Single Pulse Avalanch...


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