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SiC10A065ND

Pan Jit International
Part Number SiC10A065ND
Manufacturer Pan Jit International
Description SILICON CARBIDE SCHOTTKY DIODE
Published Sep 7, 2016
Detailed Description SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching...
Datasheet PDF File SiC10A065ND PDF File

SiC10A065ND
SiC10A065ND

Overview
SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-263  Marking: 10A065ND Benefits  High Frequency Operation  Higher System Efficiency  Environmental Protection  Parallel Device Convenience  Hard Switching & High Reliability  High Temperature Application TO-263 Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.
1) SYMBOL VRRM VRSM VR IF(AV) IFRM TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=150oC TC=25oC TC=125oC VALUE 650 650 650 25 14 10 59 50 UNITS V V V A A A A A June 13,2016-REV.
00 Page 1 SiC10A065ND Maximum Ratings PARAMETER Non-Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave) Non-Repetitive Peak Forward Surge Current (TP=10uS, Pulse) Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance Junction to Case SYMBOL IFSM TEST CONDITIONS TC=25oC TC=125oC TC=25oC PD TJ TSTG RθJC TC=25oC TC=125oC VALUE 69 63 400 93 31 175 -55 to 175 1.
6 UNITS A A A W W oC oC oC/W Electrical Characteristics PARAMETER DC Blacking Voltage Forward Voltage Reverse Current Total Capacitive Charge Total Capacitance SYMBOL VDC VF IR QC C TEST CONDITION IR =100uA, TJ=25oC IF =10A, TJ=25oC IF =10A, TJ=175oC VR =650V, TJ=25oC VR =650V, TJ=175oC IF =10A, di/dt=300A/uS, VR =400V, TJ=25oC VR =1V, TJ=25oC, f=1MHz VR =200V, TJ=25oC, f=1MHz VR =400V, TJ=25oC, f=1MHz MIN.
650 - - - TYP.
770 1.
5 1.
9 5 20 MAX.
- 1.
8 2.
2 70 190 UNITS V V V uA uA 18 - nC 398 55 54 - pF pF pF June 13,2016-REV.
00 Page 2 SiC10A065ND TYPICAL CHARACTERISTIC CURVES Fig.
1 Forward Characteristics Fig.
2 Re...


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