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IXFH9N80

IXYS
Part Number IXFH9N80
Manufacturer IXYS
Description Power MOSFETs
Published Sep 10, 2016
Detailed Description Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID...
Datasheet PDF File IXFH9N80 PDF File

IXFH9N80
IXFH9N80

Overview
Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800V 8A IXFH9N80 800V 9A 1.
1Ω 250 ns 0.
9Ω 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM ID25 IDM IAR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 8N80 9N80 8N80 9N80 8N80 9N80 800 800 ±20 ±30 8 9 32 36 8 9 V V V V A A A A A A EAR dv/dt PD TJ TJM Tstg Md Weight TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque 18 mJ 5 V/ns 180 W -55 .
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+150 150 -55 .
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+150 °C °C °C ...


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