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NPT2020-SMB2

MA-COM
Part Number NPT2020-SMB2
Manufacturer MA-COM
Description GaN Wideband Transistor
Published Sep 18, 2016
Detailed Description NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable f...
Datasheet PDF File NPT2020-SMB2 PDF File

NPT2020-SMB2
NPT2020-SMB2

Overview
NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.
5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applications  Tunable from DC - 3.
5 GHz  48 V Operation  13.
5 dB Gain at 3.
5 GHz  55 % Drain Efficiency at 3.
5 GHz  100 % RF Tested  Standard package with bolt down flange  RoHS* Compliant and 260°C reflow compatible Description The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.
5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package.
The NPT2020 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
Rev.
V1 Functional Schematic RFIN / VG 1 2 RFOUT / VD 3 Flange Ordering Information Part Number Package NPT2020 Bulk Quantity NPT2020-SMBPPR Cust...


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