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PJX8872B

Pan Jit International
Part Number PJX8872B
Manufacturer Pan Jit International
Description N-Channel Enhancement Mode MOSFET
Published Sep 19, 2016
Detailed Description PPJX8872B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features  RDS(ON) , VGS@10V, ID@600mA<...
Datasheet PDF File PJX8872B PDF File

PJX8872B
PJX8872B


Overview
PPJX8872B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features  RDS(ON) , VGS@10V, ID@600mA<3Ω  RDS(ON) , VGS@4.
5V, ID@200mA<4Ω  Advanced Trench Process Technology  Specially Designed for Relay driver, Speed line drive, etc.
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) SOT-563 Mechanical Data  Case: SOT-563 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx.
Weight: 0.
00009 ounces, 0.
0026 grams  Marking: X2B Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 60 +30 200 800 300 4 -55~150 417 UNITS V V mA mA mW mW/ oC oC oC/W June 12,2015-REV.
00 Page 1 PPJX8872B Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS TEST CONDITION VGS=0V,ID=250uA VDS=VGS, ID=250uA VGS=10V,ID=600mA VGS=4.
5V,ID=200mA VDS=60V,VGS=0V VGS=+30V,VDS=0V VDS=15V, ID=600mA, VGS=4.
5V VDS=25V, VGS=0V, f=1.
0MHZ VDD=10V, ID=600mA, VGS=10V, RG=6Ω (Note 1,2) --- Diode Forward Voltage VSD IS=500mA, VGS=0V MIN.
TYP.
MAX.
UNITS 60 - - 1.
0 1.
8 2.
5 - 1.
3 3 - 1.
7 4 V V Ω -...



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