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MBRF10150CT

Bruckewell
Part Number MBRF10150CT
Manufacturer Bruckewell
Description High-Voltage Schottky Rectifier
Published Sep 19, 2016
Detailed Description MBRF10150CT_MBRF10200CT Dual Common-Cathode High-Voltage Schottky Rectifier Description The MBRF10150CT_MBRF10200CT i...
Datasheet PDF File MBRF10150CT PDF File

MBRF10150CT
MBRF10150CT

Overview
MBRF10150CT_MBRF10200CT Dual Common-Cathode High-Voltage Schottky Rectifier Description The MBRF10150CT_MBRF10200CT is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220F package is universally preferred for all commercial-industrial applications Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • RoHS compliant package Application For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application.
Graphic symbol Mechanical Data Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per meets JESD 201 Polarity: As marked Weight: 2.
3 grams Mounting Torque: 10 in-lbs maximum Packing & Order Information 50/Tube ; 1,000/Box Publication Order Number: [MBRF10150CT_MBRF10200CT] © Bruckewell Technology Corporation Rev.
A -2014 MBRF10150CT_MBRF10200CT Dual Common-Cathode High-Voltage Schottky Rectifier MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol MBRF10150CT Maximum repetitive peak reverse voltage VRRM 150 MBRF10200CT 200 Working peak reverse voltage VRWM 105 140 Maximum DC blocking voltage VDC 150 200 Maximum average forward rectified current IF(AV) 10 Peak forward surge current 8.
3ms single half sine-wave superimposed IFSM 120 on rated load (JEDEC Method) Non-repetitive avalanche energy at 25 °C IAS = 2 A per diode EAS 12 Operating junction temperature range TJ -55 to +175 Storage temperature range TSTG -55 to +175 Unit V V V A A m’J °C °C Electrical characteristics (Tc=25°C unless otherwise noted) P...


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