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GDSSF2312

GOOD-ARK
Part Number GDSSF2312
Manufacturer GOOD-ARK
Description MOSFET
Published Sep 20, 2016
Detailed Description GDSSF2312 DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope...
Datasheet PDF File GDSSF2312 PDF File

GDSSF2312
GDSSF2312


Overview
GDSSF2312 DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 20V,ID = 4.
5A RDS(ON) < 40mΩ @ VGS=2.
5V RDS(ON) < 33mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Application ●Battery protection ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2312 SSF2312 SOT-23 Ø180mm 3D 2312 G1 2S SOT-23 top view Marking and pin Assignment Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±8 4.
5 13.
5 1.
25 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W Suzhou Goodark Electronics Co.
, Ltd Version 1.
0 GDSSF2312 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ON CHARACTERISTICS (Note 3) Min Typ Max 20 1 ±100 Gate Threshold Voltage Drain-Source On-State Resistance VGS(th) RDS(ON) Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) Diode Forwa...



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