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GDSSF8421

GOOD-ARK
Part Number GDSSF8421
Manufacturer GOOD-ARK
Description MOSFET
Published Sep 20, 2016
Detailed Description GDSSF8421 GENERAL FEATURES ●N-Channel VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V ●P-Channe...
Datasheet PDF File GDSSF8421 PDF File

GDSSF8421
GDSSF8421

Overview
GDSSF8421 GENERAL FEATURES ●N-Channel VDS = 20V,ID = 4.
5A RDS(ON) < 40mΩ @ VGS=2.
5V RDS(ON) < 30mΩ @ VGS=4.
5V ●P-Channel VDS = -20V,ID = -3.
5A RDS(ON) < 85mΩ @ VGS=-2.
5V RDS(ON) < 50mΩ @ VGS=-4.
5V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package Schematic diagram Marking and pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 8421 SSF8421 TSSOP-8 Ø330mm TSSOP-8 top view Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±12 ±12 Drain Current-Continuous@Current-Pulsed (Note 1) ID 4.
5 -3.
5 IDM 30 -30 Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG 1.
0 1.
0 -55 To 150 -55 To 150 THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch P-Ch 83 100 Unit V V A A W ℃ ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Min Typ Max Unit Suzhou Goodark Electronics Co.
, Ltd Version 1.
0 GDSSF8421 Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS SWITCHING CHARACTERISTICS (Note 4) VGS=0V ID=250μA VGS=0V ID=-250μA VDS=20V,VGS=0V VDS=-20V,VGS=0V VGS=±12V,VDS=0V VDS=VGS,ID=250μA VDS=VGS,ID=-250μA VGS=4.
5V, ID=4.
5A VGS=-4.
5V, ID=-3.
5A VGS=2.
5V, ID=3.
9A VGS=-2.
5V, ID=-2.
7A VDS=10V,ID=4.
5A VDS=-10V,ID=-3.
5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 V 1 -1 ±100 ±100 μA nA N-Ch 0.
6 P-Ch -0.
6 V N-Ch 23 30 P-Ch N-Ch 40 50 mΩ 30 40 P-Ch 60 85 N-Ch P-Ch 20 10 S Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) tr N...


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