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MSC49N02X

Bruckewell
Part Number MSC49N02X
Manufacturer Bruckewell
Description 40V N-Channel MOSFETs
Published Sep 20, 2016
Detailed Description MSC49N02X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using tr...
Datasheet PDF File MSC49N02X PDF File

MSC49N02X
MSC49N02X


Overview
MSC49N02X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features • 40V,140A, RDS(ON) =2.
2mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • Green Device Available • RoHS compliant package Applications • PowerTools • Load Switch • LED applications • Motor Drive Applications PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current - Continuous (TC=25°C) (Chip Limitation) Drain Current - Continuous (TC=100°C) (Chip Limitation) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Value 40 ±20 140 88 560 360 Unit V V A A A mJ Publication Order Number: [MSC49N02X] © Bruckewell Technology Corporation Rev.
A -2016 MSC49N02X 40V N-Channel MOSFETs Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter IAS Single Pulse Avalanched Current2 Power Dissipation (TC=25°C) PD Power Dissipation - Derate above 25°C TJ Operating Junction Temperature Range TSTG Storage Temperature Range Value 85 142 1.
14 -55 to +150 -55 to +150 Unit A W W/°C °C °C Thermal Characteristics Symbol Parameter RΘjA Thermal Resistance Junction to ambient RθJC Thermal Resistance Junction to Case Typ.
--- Max.
62 0.
88 Units °C/W Electrical Characteristics (TJ=25℃, unless otherwise noted) Off Characteristics Symbol Parameter Test Conditions BVDSS IGSS Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current VDS = 40 V , VGS = 0 V ...


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