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AP03N70J-A-HF

Part Number	AP03N70J-A-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 21, 2016
Detailed Description	Advanced Power Electronics Corp. AP03N70H/J-A-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% A...
Datasheet	AP03N70J-A-HF PDF File

Overview

Advanced Power Electronics Corp.
AP03N70H/J-A-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP03N70J) is available for low-profile applications.
BVDSS RDS(ON) ID 650V 3.
6Ω 3.
3A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range G DS TO-251(J) Rating 650 +30 3.
3 2.
1 13.
2 54.
3 3.
1 -55 to 150 -55 to 150 Units V V A A A W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 2.
3 62.
5 110 Units ℃/W ℃/W ℃/W 1 200907021 AP03N70H/J-A-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance VGS=10V, ID=1.
6A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=1.
6A Drain-Source Leakage Current VDS=600V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V Gate-Source Leakage Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance VGS=+30V, VDS=0V I...

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AP03N70J-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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