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AP03N70J-H-HF

Advanced Power Electronics
Part Number AP03N70J-H-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 21, 2016
Detailed Description Advanced Power Electronics Corp. AP03N70H/J-H-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% A...
Datasheet PDF File AP03N70J-H-HF PDF File

AP03N70J-H-HF
AP03N70J-H-HF

Overview
Advanced Power Electronics Corp.
AP03N70H/J-H-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement ▼ RoHS Compliant D G S Description The TO-252 package is widely preferred for all commercialindustrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP03N70J) is available for low-profile applications.
BVDSS RDS(ON) ID 700V 4.
4Ω 2.
5A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range G DS TO-251(J) Rating 700 +30 2.
5 1.
6 8 54.
3 0.
44 31 2.
5 -55 to 150 -55 to 150 Units V V A A A W W/℃ mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 2.
3 62.
5 110 Units ℃/W ℃/W ℃/W Data & specifications subject to change without notice 1 201305285 AP03N70H/J-H-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance3 VGS=10V, ID=1.
6A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=1.
6A Drain-Source Leakage Current VDS=600V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V Gate-Source Leakage Total Gate Charge3 VGS=+30V, VDS=0V ID=1A Gate-Source Charge VDS=480V G...


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