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SSF3051G7

Silikron Semiconductor
Part Number SSF3051G7
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description                                  Main Product Characteristics: VDSS -30V RDS(on) 45mohm(typ.) ID -4A SOT23-6  Featu...
Datasheet PDF File SSF3051G7 PDF File

SSF3051G7
SSF3051G7

Overview
                                 Main Product Characteristics: VDSS -30V RDS(on) 45mohm(typ.
) ID -4A SOT23-6  Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for buttery protection, load switching and general power management „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF3051G7  3051G7 D G Marking and pin Assignment  S Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications  Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -30 ±25 -4 -25 1.
7 -55 To 150 Unit V V A A W ℃ Thermal Resistance Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Resistance, Junction-to-Case(Note 2) RθJA RθJC 75 ℃/W 30 ℃/W ©Silikron Semiconductor CO.
,LTD.
2011.
10.
25 www.
silikron.
com  Version : 1.
0 page 1 of 9                                  SSF3051G7  Electrical Characterizes @TA=25℃ unless otherwise specified Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gat...


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