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SSF3416

Silikron Semiconductor
Part Number SSF3416
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description SSF3416 DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This ...
Datasheet PDF File SSF3416 PDF File

SSF3416
SSF3416

Overview
SSF3416 DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.
5V RDS(ON) < 18.
5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3416 SSF3416 SOT23-6 Ø180mm Tape width 8mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID（25℃） Drain Current-Continuous@ Current-Pulsed (Note 1) ID（70℃） IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 30 ±20 9 7 40 2.
5 -55 To 150 62.
5 Unit V V A A W ℃ ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max 30 Unit V ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
0 SSF3416 Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off...


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