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SSF3314E

GOOD-ARK
Part Number SSF3314E
Manufacturer GOOD-ARK
Description N-Channel MOSFET
Published Sep 22, 2016
Detailed Description DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit...
Datasheet PDF File SSF3314E PDF File

SSF3314E
SSF3314E

Overview
DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
GENERAL FEATURES ● VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.
5V RDS(ON) < 28mΩ @ VGS=3.
1V RDS(ON) < 24mΩ @ VGS=4.
0V RDS(ON) < 23mΩ @ VGS=4.
5V RDS(ON) < 18mΩ @ VGS=10V ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package SSF3314E 30V N-Channel MOSFET Schematic Diagram Pin Assignment DFN3×3-8L Bottom View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3314E SSF3314E DFN3×3-8L - Tape Width - Quantity - ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±12 8 45 1.
7 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V Min Typ Max Unit 30 V 1 μA www.
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0 SSF3314E 30V N-Channel MOSFET Gate-Body Leakage Current Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge ...


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