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AP28G40GEM-HF

Advanced Power Electronics
Part Number AP28G40GEM-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 22, 2016
Detailed Description Advanced Power Electronics Corp. AP28G40GEM-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High...
Datasheet PDF File AP28G40GEM-HF PDF File

AP28G40GEM-HF
AP28G40GEM-HF

Overview
Advanced Power Electronics Corp.
AP28G40GEM-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C SO-8 VCE ICP G E EE G 400V 150A C E Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range .
400 +6 150 1 -55 to 150 150 V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise ...


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