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AP28G45GEM

Advanced Power Electronics
Part Number AP28G45GEM
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 22, 2016
Detailed Description Advanced Power Electronics Corp. AP28G45GEM Pb Free Plating Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High...
Datasheet PDF File AP28G45GEM PDF File

AP28G45GEM
AP28G45GEM

Overview
Advanced Power Electronics Corp.
AP28G45GEM Pb Free Plating Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.
3V Gate Drive ▼ Strobe Flash Applications C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.
3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 450 ±6 ±8 130 2.
5 -55 to 150 -55 to 150 Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
IGES Gate-Emitter Leakage Current VGE=± 6V, VCE=0V ICES Collector-Emitter Leakage Current VCE=450V, VGE=0V - - 10 - - 10 VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge G...


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