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AP40G120W

Advanced Power Electronics
Part Number AP40G120W
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 22, 2016
Detailed Description Advanced Power Electronics Corp. Features ▼ Advanced IGBT Technology ▼ Low Saturation Voltage VCE(sat)=3.15V@IC=40A ▼ ...
Datasheet PDF File AP40G120W PDF File

AP40G120W
AP40G120W

Overview
Advanced Power Electronics Corp.
Features ▼ Advanced IGBT Technology ▼ Low Saturation Voltage VCE(sat)=3.
15V@IC=40A ▼ Industry Standard TO-3P Package G C E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp.
for Soldering Purposes , 1/8" from case for 10 seconds .
Notes: 1.
Pulse width limited by max.
junction temperature .
AP40G120W RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C ...


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