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MMDF4P03HDR2

ON Semiconductor
Part Number MMDF4P03HDR2
Manufacturer ON Semiconductor
Description Power MOSFET
Published Sep 23, 2016
Detailed Description MMDF4P03HD Preferred Device Power MOSFET 4 A, 30 V, P−Channel SO−8, Dual Dual MOSFET devices are designed for use in low...
Datasheet PDF File MMDF4P03HDR2 PDF File

MMDF4P03HDR2
MMDF4P03HDR2

Overview
MMDF4P03HD Preferred Device Power MOSFET 4 A, 30 V, P−Channel SO−8, Dual Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) Source Current − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VGS ID IDM IS PD 30 Vdc ± 20 Vdc 4.
0 Adc 20 Apk 1.
7 Adc 2.
0 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.
0 Vdc, VDS = 20 Vdc, IL = 9.
0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from Case for 10 s) EAS RθJA TL 450 mJ 62.
5 °C/W 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1 Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
http://onsemi.
com 4 AMPERES 30 VOLTS RDS(on...


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