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AP2301EN-HF

Part Number	AP2301EN-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 23, 2016
Detailed Description	Advanced Power Electronics Corp. AP2301EN-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of...
Datasheet	AP2301EN-HF PDF File

Overview

Advanced Power Electronics Corp.
AP2301EN-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.
5V Gate Drive ▼ Small Package Outline D ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-23S G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID G The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
-20V 130mΩ -2.
3A D S Absolute Maximum Ratings@Tj=25o.
C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage - 20 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 4.
5V Drain Current3, VGS @ 4.
5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +12 -2.
3 -1.
8 -10 1 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 125 Unit ℃/W 1 201501132 AP2301EN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=-250uA VGS=-4.
5V, ID=-2A VGS=-2.
5V, ID=-1A VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-16V, VGS=0V VGS= +12V, VDS=0V ID=-2A VDS=-10V VGS=-4.
5V VDS=-10V ID=-1A RG=3.
3Ω VGS=-5V VGS=0V .
VDS=-10V f=1.
0MHz -20 - - V - - 130 mΩ - - 19...

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AP2301EN-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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