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UT70P02

UTC
Part Number UT70P02
Manufacturer UTC
Description Power MOSFET
Published Sep 23, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UT70P02 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Power MOSFET „ DESCRIPTION The UT70P02 ...
Datasheet PDF File UT70P02 PDF File

UT70P02
UT70P02

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UT70P02 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Power MOSFET „ DESCRIPTION The UT70P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
„ FEATURES * RDS(ON) = 6mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.
Drain *Pb-free plating product number: UT70P02L 1.
Gate 3.
Source „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT70P02-TN3-R UT70P02L-TN3-R UT70P02-TN3-T UT70P02L-TN3-T Package TO-252 TO-252 Pin Assignment 123 GDS GDS Packing Tape Reel Tube www.
unisonic.
com.
tw Copyright © 2008 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R502-209.
A UT70P02 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -25 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current , VGS=4.
5V TC=25°C ID -75 A Pulsed Drain Current (Note 1) IDM -350 A Power Dissipation @ TC=25°C PD 107 W Junction Temperature TJ +175 W/℃ Strong Temperature TSTG -55 ~ +175 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL MIN TYP MAX UNIT θJA 110 ℃/W θJC 1.
4 ℃/W „ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTJ VGS =0 V, ID =-250 µA Reference to 25℃, ID=-1mA -25 -0.
018 V V/°С Drain-Source Leakage Current Gate-Body Leakage Current IDSS VDS =-30 V, VGS =0 V, TJ =25°C IGSS VGS = ±20 V -1 µA ±100 nA ON CHARACTERISTICS Gate Thr...


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