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STN8822A

Stanson Technology
Part Number STN8822A
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode powe...
Datasheet PDF File STN8822A PDF File

STN8822A
STN8822A

Overview
STN8822A Dual N Channel Enhancement Mode MOSFET 6.
0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6 FEATURE 20V/6.
0A, RDS(ON) = 25m-ohm @VGS =4.
5V 20V/5.
0A, RDS(ON) =42m-ohm @VGS =2.
5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSOP-6 package design F：Year Code A: Produces Code X：Wafer Code 2 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STN8822A 2009.
V1 STN8822A Dual N Channel Enhancement Mode MOSFET 6.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage VDSS VGSS 20 +/-10 Unit V V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient ID IDM IS PD TJ TSTG RθJA 6.
0 3.
4 15 1.
5 2.
0 1.
2 -40/140 -55/150 105 A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STN8822A 2009.
V1 STN8822A Dual N Channel Enhancement Mode MOSFET 6.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Symbol V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge IDSS ID(on) RDS(on) gfs VSD Qg Condi...


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