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STN8882D

Stanson Technology
Part Number STN8882D
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN8882D N Channel Enhancement Mode MOSFET 60.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power fiel...
Datasheet PDF File STN8882D PDF File

STN8882D
STN8882D


Overview
STN8882D N Channel Enhancement Mode MOSFET 60.
0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE � 30V/ 35A, RDS(ON) = 5mΩ � @VGS = 10V � 30V/35A, RDS(ON) = 7mΩ @VGS = 4.
5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STN8882D 2009.
V1 STN8882D N Channel Enhancement Mode MOSFET 60.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 30 ±20 60 40 100 50 40 55 150 -55/150 100 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STN8882D 2009.
V1 STN8882D N Channel Enhancement Mode MOSFET 60.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current V(BR)DSS VGS=0V,ID=250mA 30 VGS(th) VDS=VGS,ID=250uA 1.
0 IGSS IDSS ID(on) VDS=0V,VGS=±20V VDS=30V,VGS...


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