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STN3456ST6RG

Stanson Technology
Part Number STN3456ST6RG
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN3456 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The STN3456 is the N-Channel enhancement mode power field ef...
Datasheet PDF File STN3456ST6RG PDF File

STN3456ST6RG
STN3456ST6RG

Overview
STN3456 N Channel Enhancement Mode MOSFET 6.
0A DESCRIPTION The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P FEATURE ◆ 30V/6.
0A, RDS(ON)=40mΩ@VGS=10V ◆ 30V/5.
0A, RDS(ON)=50mΩ@VGS=4.
5V ◆ Super high density cell design for extremely low RDS(ON) ◆ ...


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