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STN4186D

Stanson Technology
Part Number STN4186D
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power fiel...
Datasheet PDF File STN4186D PDF File

STN4186D
STN4186D

Overview
STN4186D N Channel Enhancement Mode MOSFET 35.
0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 40V/20.
0A, RDS(ON) = 13mΩ (Typ.
) @VGS = 10V 40V/15.
0A, RDS(ON) = 15mΩ @VGS = 4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING Y: Year Code A: Week Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STN4186D 2009.
V1 STN4186D N Channel Enhancement Mode MOSFET 35.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 40 ±20 70 60 50 25 150 -55/150 60 Unit V V A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STN4186D 2009.
V1 STN4186D N Channel Enhancement Mode MOSFET 35.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS VDS=0V,VGS=±20V VDS=40V,VGS=0V VDS=40V,VGS=0V TJ=85℃ 40 1.
0 V 3.
0 V ±100 1 5 nA uA Drain-source OnResistance RD...


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