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STN4412S8TG

Stanson Technology
Part Number STN4412S8TG
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File STN4412S8TG PDF File

STN4412S8TG
STN4412S8TG

Overview
STN4412 N Channel Enhancement Mode MOSFET 6.
8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8 FEATURE z 30V/6.
8A, RDS(ON) = 28mΩ @VGS = 10V z 30V/5.
6A, RDS(ON) = 36mΩ @VGS = 4.
5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 STN4412 SYA ORDERING INFORMATION Part Number STN4412S8RG Package SOP-8P Part Marking STN4412 STN4412S8TG SOP-8P STN4412 ※ Process Code : A ~ Z ; a ~ z ※ STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4412 2007.
V1 STN4412 N Channel Enhancement Mode MOSFET 6.
8A ※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 6.
8 5.
6 30 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ 2.
3 2.
8 1.
6 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4412 2007.
V1 STN4412 N Channel Enhancement Mode MOSFET 6.
8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Volta...


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