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AP20GT60SW

Advanced Power Electronics
Part Number AP20GT60SW
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2016
Detailed Description Advanced Power Electronics Corp. AP20GT60SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ...
Datasheet PDF File AP20GT60SW PDF File

AP20GT60SW
AP20GT60SW

Overview
Advanced Power Electronics Corp.
AP20GT60SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.
=1.
8V@IC=20A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free G C E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IDM PD@TC=25℃ TSTG TJ TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Collector to Emitter Diode Forward Current 1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp.
for Soldering Purposes , 1/8" from case for 5 seconds .
C VCES IC TO-3P G Rating 600 +20 40 20 160 40 125 -55 to 150 150 300 600V 20A C E Units V V A A A A W oC oC oC Notes: 1.
Pulse width limited by max.
junction temperature .
Thermal Data .
Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a T...


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