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AP60SL380AH

Advanced Power Electronics
Part Number AP60SL380AH
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2016
Detailed Description Advanced Power Electronics Corp. AP60SL380AH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & ...
Datasheet PDF File AP60SL380AH PDF File

AP60SL380AH
AP60SL380AH

Overview
Advanced Power Electronics Corp.
AP60SL380AH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP60SL380A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
VDS @ Tj,max.
RDS(ON) ID3 650V 0.
38Ω 10A G D S TO-252(H) Absolute Maximum Ratings@Tj=25o.
C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 +20 V 10 A 6.
5 A 24 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) 50 V/ns PD@TC=25℃ PD@TA=25℃ EAS dv/dt Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 78.
1 W 2W 75 mJ 15 V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient4 Value 1.
6 62.
5 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201505271 AP60SL380AH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on)...


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