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AP70SL1K4AI

Advanced Power Electronics
Part Number AP70SL1K4AI
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2016
Detailed Description Advanced Power Electronics Corp. AP70SL1K4AI Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & ...
Datasheet PDF File AP70SL1K4AI PDF File

AP70SL1K4AI
AP70SL1K4AI


Overview
Advanced Power Electronics Corp.
AP70SL1K4AI Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP70SL1K4A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications.
The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS RDS(ON) ID3,4 700V 1.
4Ω 3.
2A G DS TO-220CFM(I) .
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 700 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 +20 V 3.
2 A 2.
1 A 8.
3 A dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 50 25 1.
13 27 15 V/ns W W mJ V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 5 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201511041 AP70SL1K4AI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=1A VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=20V, ID=1A IDSS Drain-Source Leakage ...


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