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MA4AGSW8-1

MA-COM
Part Number MA4AGSW8-1
Manufacturer MA-COM
Description SP8T AlGaAs PIN Diode Switch
Published Sep 28, 2016
Detailed Description MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant FEATURES  Ultra Broad Bandwidth: 50 MHz to 40 GHz  Functional B...
Datasheet PDF File MA4AGSW8-1 PDF File

MA4AGSW8-1
MA4AGSW8-1

Overview
MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant FEATURES  Ultra Broad Bandwidth: 50 MHz to 40 GHz  Functional Bandwidth : 50 MHz to 50 GHz  Low Current consumption.
 -10mA for low loss state +10mA for Isolation state  M/A-COM’s unique AlGaAs hetero-junction anode technology.
 Silicon Nitride Passivation  Polymer Scratch protection Rev.
V2 Yellow areas indicate bond pads DESCRIPTION M/A-COM’s MA4AGSW8-1 is an Aluminum-GalliumArsenide, single pole, eight throw (SP8T), PIN diode switch.
The switch features enhanced AlGaAs anodes which are formed using M/A-COM’s patented heterojunction technology.
AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes.
As much as a 0.
3 dB reduction in insertion loss can be realized at 50 GHz.
This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.
The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed.
They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection.
The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges.
Off chip bias circuitry is required.
APPLICATIONS The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs.
AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components.
Absolute Maximum Ratings @ TAMB = +25°C Parameter Operating Temperature Storage Temperature Incident C.
W.
RF Power Breakdown Voltage Maximum Rating -55°C to +125°C -55°C to +150°C +23dBm C.
W.
25V Bias Current ± 25mA Assembly Temperature Junction Temperature +300°C < 10 sec +175°C Maximum combined operating conditions for RF Power, D.
C.
bias, and te...


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