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ESDL24VAE1

Part Number	ESDL24VAE1
Manufacturer	JCET
Description	ESD Protection Diode
Published	Sep 28, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFN:%0.6×0.3-2L Plastic-Encapsulate Diodes ESDL24VAE1 Uni-direction ...
Datasheet	ESDL24VAE1 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD DFN:%0.
6×0.
3-2L Plastic-Encapsulate Diodes ESDL24VAE1 Uni-direction ESD Protection Diode DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients.
Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces.
It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
DFN:%0.
6×0.
3-2L FEATURES z Uni-directional ESD protection of one line z Low reverse stand−off voltage: 24V z Low reverse clamping voltage z Low leakage current  Excellent package:0.
62mm×0.
32mm×0.
31mm z Fast response time z JESD22-A114-B ESD Rating of class 3B per human body model z IEC 61000-4-2 Level 4 ESD protection APPLICATIONS z Computers and peripherals z High speed data lines z Audio and video equipment z Cellular handsets and accessories z Portable electronics z Other electronics equipments communi- cation systems MARKING E E = Device code The marking bar indicates the cathode Front side www.
cj-elec.
com 1 A-1,Jul,2016 CHANGJIANG ELEC.
TECH.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) ESDL24VAE1 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±25 ±25 ±16 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.
4 90 2.
5 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).
Device stressed with ten non-repetitive ESD pulses.
(2).
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
Unit kV W A ℃ ℃ ℃ ES...

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