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CESD12VD5

JCET
Part Number CESD12VD5
Manufacturer JCET
Description ESD Protection Diode
Published Sep 28, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes CESD12VD5 Uni-direction ESD Prote...
Datasheet PDF File CESD12VD5 PDF File

CESD12VD5
CESD12VD5


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-523 Plastic-Encapsulate Diodes CESD12VD5 Uni-direction ESD Protection Diode DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients.
Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible solution for applications such as Digital cameras,cellular phones, and MP3 Players.
It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
SOD-523 FEATURES  Uni-directional ESD protection of one line  Reverse stand−off voltage: 12V  Low reverse clamping voltage  Low leakage current  Excellent package:1.
20mm×0.
80mm×0.
60mm  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 4 ESD protection APPLICATIONS  Computers and peripherals  Digital Cameras  Audio and video equipment  Cellular handsets and accessories MARKING  Portable electronics  Mp3 Players  Other electronics equipments communi- cation systems ZM = Device code Solid dot = Green molding compound device,if none, the normal device The marking bar indicates the cathode Front side www.
cj-elec.
com 1 D,Feb,2014 CHANGJIANG ELEC.
TECH.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) CESD12VD5 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±25 ±25 ±16 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.
4 220 9 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).
Device stressed with ten non-repetitive ESD pulses.
(2).
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
Unit...



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