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CESD7V0D7

JCET
Part Number CESD7V0D7
Manufacturer JCET
Description ESD Protection Diode
Published Sep 28, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-723 Plastic-Encapsulate Diodes CESD7V0D7 ESD Protection Diode S...
Datasheet PDF File CESD7V0D7 PDF File

CESD7V0D7
CESD7V0D7

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-723 Plastic-Encapsulate Diodes CESD7V0D7 ESD Protection Diode SOD-723 DESCRIPTION The CESD7V0D7 is designed to protect voltage sensitive components from ESD.
Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD.
Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium.
FEATURES z Stand−off Voltage:7.
0 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 kV) Per Human Body Model z IEC61000−4−2 Level 4 ESD Protection z These are Pb−Free Devices Maximum Ratings @Ta=25℃ Parameter IEC61000−4−2(ESD) Air Contact ESD voltage Per Human Body Model Per Machine Model Total Power Dissipation on FR-5 Board (Note 1) Symbol PD Limit ±30 ±30 16 400 100 Thermal Resistance Junction−to−Ambient RΘJA 1250 Lead Solder Temperature − Maximum (10 Second Duration) TL 260 Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Stresses exceeding maximum ratings may damage the device.
Maximum ratings are stress ratings only.
Functional operation above the recommended.
Operating conditions is not implied.
Extended exposure to stresses above the recommended operating conditions may affect device reliability.
1.
FR−5 = 1.
0 x 0.
75 x 0.
62 in.
Unit KV KV V mW ℃/W ℃ ℃ B,Dec,2011 ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Max.
Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.
9 V Max.
@ IF = 10mA for all types) Device Device Marking VRWM (V) Max IR (μA) @ VRWM Max VBR (V) @ IT(Note 2) Min...


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