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CESDLC5V0G3

JCET
Part Number CESDLC5V0G3
Manufacturer JCET
Description ESD Protection Diode
Published Sep 28, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-143 Plastic-Encapsulate Diodes CESDLC5V0G3 Quad-direction ESD Pr...
Datasheet PDF File CESDLC5V0G3 PDF File

CESDLC5V0G3
CESDLC5V0G3

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-143 Plastic-Encapsulate Diodes CESDLC5V0G3 Quad-direction ESD Protection Array DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients.
Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces.
It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
SOT-143 FEATURES  Uni-directional ESD protection of four lines  Low capacitance: 10pF(Typ)  Low reverse stand−off voltage: 5V  Low reverse clamping voltage  Low leakage current  Excellent package:2.
9mm×1.
3mm×1.
0mm  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 3 ESD protection APPLICATIONS  Computers and peripherals  Audio and video equipment  Subscriber Identity Module (SIM) card protection  Cellular handsets and accessories MARKING  Portable electronics  Other electronics equipments communication systems 1C = Device code Front side www.
cj-elec.
com 1 C,Apr,2014 CHANGJIANG ELEC.
TECH.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) CESDLC5V0G3 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±10 ±10 ±15 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.
4 28 2.
5 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).
Device stressed with ten non-repetitive ESD pulses, Per channel(I/O to GND).
(2).
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
...


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