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DF2B6.8ACT

Toshiba Semiconductor
Part Number DF2B6.8ACT
Manufacturer Toshiba Semiconductor
Description ESD Protection Diodes
Published Sep 29, 2016
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2B6.8ACT DF2B6.8ACT 1. Applications • ESD Protection Note: This produ...
Datasheet PDF File DF2B6.8ACT PDF File

DF2B6.8ACT
DF2B6.8ACT

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2B6.
8ACT DF2B6.
8ACT 1.
Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit 1: Pin 1 2: Pin 2 CST2 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD ±30 kV Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewi...


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