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DF2B7M2CL

Toshiba Semiconductor
Part Number DF2B7M2CL
Manufacturer Toshiba Semiconductor
Description ESD Protection Diodes
Published Sep 29, 2016
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2B7M2CL DF2B7M2CL 1. Applications • ESD Protection Note: This product...
Datasheet PDF File DF2B7M2CL PDF File

DF2B7M2CL
DF2B7M2CL

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2B7M2CL DF2B7M2CL 1.
Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit 1: Pin 1 2: Pin 2 CL2 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage (IEC61000-4-2)(Air) VESD (Note 1) ±12 ±15 kV Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Junction temperature Storage temperature PPK IPP (Note 2) Tj Tstg 40 2 150 -55 to 150 W A   Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
©2015 Toshiba Corporation 1 Start of commercial production 2014-07 2015-08-19 Rev.
2.
0 4.
Electrical Characteristics (Unless otherwise specified, Ta = 25) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance DF2B7M2CL Fig.
4.
1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ.
Max Unit Working peak reverse voltage VRWM    5.
5 V Reverse breakdown voltage VBR IBR = 1 mA 6 ...


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