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FMH47N60S1

Fuji Electric
Part Number FMH47N60S1
Manufacturer Fuji Electric
Description N-Channel enhancement mode power MOSFET
Published Sep 29, 2016
Detailed Description FMH47N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhanceme...
Datasheet PDF File FMH47N60S1 PDF File

FMH47N60S1
FMH47N60S1

Overview
FMH47N60S1 Super J-MOS series http://www.
fujielectric.
com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-3P 15.
5max 13 ± 0.
2 10 ± 0.
2 φ3.
2± 0.
1 1.
5±0.
2 4.
5±0.
2 5 ±0.
1 1.
5 3 ±0.
2 19.
5 ±0.
2 14.
5 ±0.
2 1.
6 +0.
3 -0.
1 2.
2 +0.
3 -0.
1 5.
45 ± 0.
2 1.
6 +0.
3 -0.
1 1.
1 +0.
2 -0.
1 5.
45 ± 0.
2 PRE-SOLDER 0.
5 +0.
2 0 1.
5 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.
1 and Fig.
2 Note *3 : Starting Tch=25°C, IAS=7.
6A, L=40.
2mH, VDD=60V, RG=50Ω, See Fig.
1 and Fig.
2 EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-23.
5A, -di/dt=80A/μs, VDD≤300V, Tch≤150°C.
Note *5 : IF≤-23.
5A, dV/dt=13kV/μs, VDD≤300V, Tch≤150°C.
Characteristics 600 600 ±47 ±29.
7 ±141 ±30 9.
5 1267.
4 50 13 80 2.
5 390 150 -55 to +150 Electrical Characteristics at TC=25°C (unless otherwise specified) • Static Ratings Description Symbol Conditions Drain-Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Gate resistance IGSS RDS(on) RG ID=250μA VGS=0V ID=250μA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS= ±30V VDS=0V ID=23.
5A VGS=10V f=1MHz, open drain Tch=25°C Tch=125°C min.
600 2.
5 - Equivalent circuit schematic ②Drain ①② ③ ① Gate ③S...


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