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MASW-011021 Datasheet PDF


Part Number MASW-011021
Manufacturer MA-COM
Title Silicon PIN Diode SPDT Switch
Description This device is a SURMOUNT™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale conf...
Features
 Specified from 8 GHz to 12 GHz
 Low Insertion Loss
 High Isolation
 Low Parasitic Capacitance and Inductance
 Surface Mountable, Fully Monolithic Die
 Glass Encapsulated Construction
 20 W Pulsed Power Handling5
 Silicon Nitride Passivation
 Polymer Scratch Protection
 RoHS* Compliant Re...

File Size 708.87KB
Datasheet MASW-011021 PDF File








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MASW-011021-001SMB : This device is a SURMOUNT™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly. This device is fabricated using M/A-COM Technology Solutions’ patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass. Selective backside metalization is applied producing a surface mount.

MASW-011021-14010G : This device is a SURMOUNT™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly. This device is fabricated using M/A-COM Technology Solutions’ patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass. Selective backside metalization is applied producing a surface mount.

MASW-011032 : The MASW-011032 is a symmetrical high power series-shunt silicon PIN diode SP3T switch in a common cathode configuration, operating from 50 MHz to 2.5 GHz. It features low insertion loss and excellent linearity with low DC consumption. This device is capable of handling 100 W C.W. of incident power at a base plate temperature of 85º C. This device is ideal for use on land mobile radio and MIL-COM applications requiring higher CW and pulsed power operation. The MASW-011032 is manufactured using M/A-COM Technology Solutions’ hybrid manufacturing process featuring high voltage PIN diodes and passive devices integrated in a 7 mm PQFN 16-lead plastic package. Ordering Information1 Part Number .

MASW-011036 : The MASW-011036 is a high power SPDT with 50 Ω terminated RF ports. This broadband, high linearity, SPDT switch was developed for Ka–Band applications that require up to 13 Watts CW power handling at an environmental temperature of +85°C while maintaining low insertion loss and high isolation. RF2 4 SW2 C Rterm2 (50 Ω) CC SW1 C Rterm1 (50 Ω) RF1 3 The SPDT MMIC utilizes MACOM’s proven AlGaAs PIN diode technology. The switch is fully passivated with silicon nitride and has an added polymer layer for scratch protection. The protective coating prevents damage to the.

MASW-011041 : The MASW-011041 is a high power PIN diode SP3T switch in a common anode configuration, operating from 50 MHz to 1 GHz. It features low insertion loss and excellent linearity. It includes two high-power ports capable of handling up to 200 Watts CW and one low-power port capable of handling up to 100 Watts CW of incident power at a base plate temperature of +85ºC. This high power switch is ideal for use on land mobile radio and MIL-COM applications that require higher CW and pulsed power operation. This device can operate with positive-only DC supplies, making it suitable for switch-filter and power amplifier control circuits. The MASW-011041 is manufactured using MACOM’s hybrid manufacturing .

MASW-011041-001SMB : The MASW-011041 is a high power PIN diode SP3T switch in a common anode configuration, operating from 50 MHz to 1 GHz. It features low insertion loss and excellent linearity. It includes two high-power ports capable of handling up to 200 Watts CW and one low-power port capable of handling up to 100 Watts CW of incident power at a base plate temperature of +85ºC. This high power switch is ideal for use on land mobile radio and MIL-COM applications that require higher CW and pulsed power operation. This device can operate with positive-only DC supplies, making it suitable for switch-filter and power amplifier control circuits. The MASW-011041 is manufactured using MACOM’s hybrid manufacturing .

MASW-011041-TR0500 : The MASW-011041 is a high power PIN diode SP3T switch in a common anode configuration, operating from 50 MHz to 1 GHz. It features low insertion loss and excellent linearity. It includes two high-power ports capable of handling up to 200 Watts CW and one low-power port capable of handling up to 100 Watts CW of incident power at a base plate temperature of +85ºC. This high power switch is ideal for use on land mobile radio and MIL-COM applications that require higher CW and pulsed power operation. This device can operate with positive-only DC supplies, making it suitable for switch-filter and power amplifier control circuits. The MASW-011041 is manufactured using MACOM’s hybrid manufacturing .

MASW-011052 : The MASW-011052 device is a SP2T broad band switch with integrated bias networks utilizing MACOM’s patented HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - S.

MASW-011053 : The MASW-011053 device is a SP3T broad band switch with integrated bias networks utilizing MACOM’s patented HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - S.

MASW-011055 : The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity. This device is capable of handling 100 Watts CW incident power at a base plate temperature of 85ºC. This high power switch is ideal for use on land mobile radio and MIL-COM applications that require higher CW and pulsed power operation. The MASW-011055 is manufactured using MACOM’s hybrid manufacturing process featuring high voltage PIN diodes and passive devices integrated in a 5 mm HQFN 12-lead plastic package. Ordering Information1 Part Number Package MASW-011055-TR0500 500 piece reel MASW-011055-SMB Sample Bo.

MASW-011055-SMB : The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity. This device is capable of handling 100 Watts CW incident power at a base plate temperature of 85ºC. This high power switch is ideal for use on land mobile radio and MIL-COM applications that require higher CW and pulsed power operation. The MASW-011055 is manufactured using MACOM’s hybrid manufacturing process featuring high voltage PIN diodes and passive devices integrated in a 5 mm HQFN 12-lead plastic package. Ordering Information1 Part Number Package MASW-011055-TR0500 500 piece reel MASW-011055-SMB Sample Bo.

MASW-011055-TR0500 : The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity. This device is capable of handling 100 Watts CW incident power at a base plate temperature of 85ºC. This high power switch is ideal for use on land mobile radio and MIL-COM applications that require higher CW and pulsed power operation. The MASW-011055 is manufactured using MACOM’s hybrid manufacturing process featuring high voltage PIN diodes and passive devices integrated in a 5 mm HQFN 12-lead plastic package. Ordering Information1 Part Number Package MASW-011055-TR0500 500 piece reel MASW-011055-SMB Sample Bo.

MASW-011102 : The MASW-011102 is a versatile, broadband, nonreflective, high isolation SPDT switch offered in a lead-free 3 mm 14-lead PQFN surface mount plastic package. The switch operates from DC to 30 GHz and provides 1.8 dB insertion loss and 40 dB isolation. The combination of broadband performance along with fast switching and excellent settling time make this device ideal for many applications, including test & measurement, EW and broadband communication systems. The MASW-011102 uses MACOM’s robust process with full surface passivation for high performance and high reliability. Ordering Information1,2 MASW-011102-TR0500 500 piece reel MASW-011102-TR1000 1000 piece reel MASW-011102-SMB Samp.

MASW-011105 : The MASW-011105 is a versatile, broadband, high isolation SPDT switch offered in a lead-free 3 mm 14-lead PQFN surface mount plastic package. The combination of broadband performance along with fast switching and excellent settling time make this device ideal for many applications, including test & measurement, EW and broadband communication systems. The MASW-011105 is fabricated using MACOM’s robust process with full surface passivation for a high performance and high reliability. Ordering Information1,2 Part Number Package MASW-011105-TR0500 500 piece reel MASW-011105-TR1000 1000 piece reel MASW-011105-001SMB Sample Board 1. Reference Application Note M513 for reel size in.

MASW-011107-DIE : The MASW-011107-DIE is a versatile, broadband, non-reflective SPDT switch offered as bare die part. The switch operates from DC to 26.5 GHz and provides 2.0 dB insertion loss and 40 dB isolation. The combination of broadband performance along with very fast switching and excellent settling time make this device ideal for many applications, including Test & Measurement, EW and broadband communication systems. The MASW-011107-DIE is fabricated using MACOMs’ mature 0.5 µm low gate-lag pHEMT process. This robust process features full surface passivation for a high performance and high reliability. Ordering Information Part Number MASW-011107-DIE 1. Die quantity.

MASW-011226 : The MASW-011226 is an absorptive, wideband single pole four throw (SP4T) switch with 1.35 dB of insertion loss and 50 dB isolation at 3.5 GHz. The RF output ports are terminated in 50 Ω in the isolated path. The power handling capability is 28 dBm. The input and output return losses in the thru path are typically 13 dB. The logic levels are compatible with standard 1.8, 2.5, or 3.3 V CMOS. Required bias supplies are +3.3 V and -3.3 V. The MASW-011226 is manufactured on a Siliconon-Insulator process. The 4 mm QFN package is lead free and RoHS compliant. Ordering Information1 Part Number MASW-011226-TR1000 MASW-011226-001SMB Package 1000 Piece Reel Sample Board 1. Reference Application Not.




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