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AP9938AGEY-HF

Part Number	AP9938AGEY-HF
Manufacturer	Advanced Power Electronics
Description	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 3, 2016
Detailed Description	Advanced Power Electronics Corp. AP9938AGEY-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Cap...
Datasheet	AP9938AGEY-HF PDF File

Overview

Advanced Power Electronics Corp.
AP9938AGEY-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.
5V Gate Drive ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D1/D2 2928-8 G2 S2 G1 S1 Description AP9938A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.
BVDSS RDS(ON) ID D1 G1 G2 S1 20V 16mΩ 7.
5A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.
5V3 Drain Current, VGS @ 4.
5V3 Pulsed Drain Current1 20 V +12 V 7.
5 A 6A 40 A PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 1.
38 -55 to 150 -55 to 150 W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201412182 AP9938AGEY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Source-Drain Diode Symbol VSD Parameter Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V, ID=2...

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AP9938AGEY-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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