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AP9972GR-HF

Advanced Power Electronics
Part Number AP9972GR-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 3, 2016
Detailed Description Advanced Power Electronics Corp. AP9972GR-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate...
Datasheet PDF File AP9972GR-HF PDF File

AP9972GR-HF
AP9972GR-HF

Overview
Advanced Power Electronics Corp.
AP9972GR-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D BVDSS 60V RDS(ON) 18mΩ G ID 60A S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
G DS TO-262(R) Absolute Symbol Maximum RatingPsa@ramTejt=er25o.
C(unless otherwise specified) Rating Units VDS Drain-Source Voltage VGS Gate-Source Voltage 60 V +25 V ID@TC=25℃ ID@TC=100℃ IDM Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 60 A 38 A 230 A PD@TC=25℃ EAS IAR TSTG TJ Total Power Dissipation Single Pulse Avalanche Energy3 Avalanche Current3 Storage Temperature Range Operating Junction Temperature Range 89 45 30 -55 to 150 -55 to 150 W mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 1.
4 62 Units ℃/W ℃/W 1 201408284 AP9972GR-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=35A VGS=4.
5V, ID=25A VDS=VGS, ID=250uA VDS=10V, ID=35A VDS=48V, VGS=0V VGS=+25V, VDS=0V ID=35A VDS...


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