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EKI04047

SANKEN
Part Number EKI04047
Manufacturer SANKEN
Description N Channel Trench Power MOSFET
Published Oct 3, 2016
Detailed Description 40 V, 80 A, 4.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04047 Features  V(BR)DSS --------------------------------- ...
Datasheet PDF File EKI04047 PDF File

EKI04047
EKI04047

Overview
40 V, 80 A, 4.
1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04047 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------5.
2 mΩ max.
(VGS = 10 V, ID = 42.
8 A)  Qg------16.
0 nC (VGS = 4.
5 V, VDS = 20 V, ID = 42.
8 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
5 V Gate Drive  100 % UIL Tested  RoHS Compliant Package TO-220 (4) D (1) (2) (3) GDS Applications  DC-DC converters  Synchronous Rectification  Power Supplies Equivalent circuit D(2)(4) G(1) S(3) Not to scale Absolute Maximum Ratings  Unless otherwise specified, TA = 25 °C Parameter Symbol Drain to Source Voltage VDS Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) IDM IS ISM Single Pulse Avalanche Energy EAS Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range IAS PD TJ TSTG Test conditions TC = 25 °C PW ≤ 100µs Duty cycle ≤ 1 % PW ≤ 100µs Duty cycle ≤ 1 % VDD = 20 V, L = 1 mH, IAS = 9.
4 A, unclamped, RG = 4.
7 Ω Refer to Figure 1 TC = 25 °C Rating 40 ± 20 80 161 80 161 89 16.
7 90 150 − 55 to 150 Unit V V A A A A mJ A W °C °C EKI04047-DS Rev.
1.
3 May.
29, 2014 SANKEN ELECTRIC CO.
,LTD.
http://www.
sanken-ele.
co.
jp 1 EKI04047 Thermal Characteristics  Unless otherwise specified, TA = 25 °C Parameter Symbol Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) RθJC RθJA Test Conditions Min.
Typ.
Max.
Unit − − 1.
4 °C/W − − 62.
5 °C/W Electrical Characteristics  Unless otherwise specified, TA = 25 °C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Drain to Source Leakage Current IDSS Gate to Source Leakage Current IGSS Gate Threshold Voltage VGS(th) Static Drain to Source On-Resistance RDS(ON) Gate Resistance Input Capacitance Output Capacitan...


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