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AP9980GM-HF

Part Number	AP9980GM-HF
Manufacturer	Advanced Power Electronics
Description	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 3, 2016
Detailed Description	Advanced Power Electronics Corp. AP9980GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low G...
Datasheet	AP9980GM-HF PDF File

Overview

Advanced Power Electronics Corp.
AP9980GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 80V 52mΩ 4.
6A Description AP9980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1 D1 G2 D2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, V...

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AP9980GM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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