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AP2614GY-HF

Part Number	AP2614GY-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 3, 2016
Detailed Description	Advanced Power Electronics Corp. AP2614GY-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of...
Datasheet	AP2614GY-HF PDF File

Overview

Advanced Power Electronics Corp.
AP2614GY-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.
5V Gate Drive ▼ Lower On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free S D D SOT-26 G D D BVDSS RDS(ON) ID Description AP2614 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercial-industrial applications.
G 20V 25mΩ 7.
2A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.
5V Continuous Drain Current3, VGS @ 4.
5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 20 +12 7.
2 5.
8 30 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.
5 Unit ℃/W 1 201209241 AP2614GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.
5V, ID=5A VGS=2.
5V, ID=2.
5A VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=16V, VGS=0V VGS= +12V, VDS=0V ID=5A VDS=10V VGS=4.
5V VDS=10V ID=1A RG=3.
3Ω VGS=5V VGS=0V VDS=10...

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AP2614GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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