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AP2615GEY-HF

Part Number	AP2615GEY-HF
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 3, 2016
Detailed Description	Advanced Power Electronics Corp. AP2615GEY-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Dr...
Datasheet	AP2615GEY-HF PDF File

Overview

Advanced Power Electronics Corp.
AP2615GEY-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free S D D SOT-26 G DD Description AP2615 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercial-industrial applications.
BVDSS RDS(ON) ID G -30V 52mΩ - 5.
0A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating - 30 +20 -5.
0 -4.
0 -20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.
5 Unit ℃/W 1 201305061 AP2615GEY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=-250uA VGS=-10V, ID=-4A VGS=-4.
5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-24V, VGS=0V VGS=+20V, VDS=0V ID=-4A VDS=-15V VGS=-4.
5V VDS=-15V ID=-1A RG=3.
3Ω VGS=-10V VGS=0V VDS=-15V f=1.
0MHz f=1.
...

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AP2615GEY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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