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AP97T07GP-HF

Advanced Power Electronics
Part Number AP97T07GP-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 4, 2016
Detailed Description Advanced Power Electronics Corp. AP97T07GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Dr...
Datasheet PDF File AP97T07GP-HF PDF File

AP97T07GP-HF
AP97T07GP-HF

Overview
Advanced Power Electronics Corp.
AP97T07GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial through-hole applications.
BVDSS RDS(ON) ID G D S 75V 3.
6mΩ 220A TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Package Limited) Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 75 +20 220 150 120 880 375 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.
4 62 Units ℃/W ℃/W 1 200907281 AP97T07GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=60A VDS=VGS, ID=250uA VDS=10V, ID=60A VDS=75V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=60V VGS=10V VDS=40V ID=40A RG=25Ω,...


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