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UT8SF2M40

Aeroflex Circuit Technology
Part Number UT8SF2M40
Manufacturer Aeroflex Circuit Technology
Description 80Megabit Flow-thru SSRAM
Published Oct 4, 2016
Detailed Description Standard Products UT8SF2M40 80Megabit Flow-thru SSRAM Preliminary Datasheet www.aeroflex.com/memories April 2015 FEATUR...
Datasheet PDF File UT8SF2M40 PDF File

UT8SF2M40
UT8SF2M40

Overview
Standard Products UT8SF2M40 80Megabit Flow-thru SSRAM Preliminary Datasheet www.
aeroflex.
com/memories April 2015 FEATURES  Synchronous SRAM organized as 2Meg words x 40bit  Continuous Data Transfer (CDT) architecture eliminates wait states between read and write operations  Supports 40MHz to 80MHz bus operations  Internally self-timed output buffer control eliminates the need for synchronous output enable  Registered inputs and outputs for flow-thru operation  Single 2.
5V to 3.
3V supply  Clock-to-output time - Clk to Q = 12ns  Clock Enable (CEN) pin to enable clock and suspend operation  Synchronous self-timed writes  Three Chip Enables (CS0, CS1, CS2) for simple depth expansion  "ZZ" Sleep Mode option for partial power-down  "SHUTDOWN" Mode option for deep power-down  Four Word Burst Capability--linear or interleaved  Operational Environment - Total Dose: 100 krad(Si) - SEL Immune: ≤ 100MeV-cm2/mg - SEU error rate: 1.
7x10-6 errors/bit-day  Package options: - 288-lead CLGA, CCGA, and CBGA  Standard Microelectronics Drawing (SMD) 5962-TBD - QMLQ and Q+ pending INTRODUCTION The UT8SF2M40 is a high performance 83,886,080-bit synchronous static random access memory (SSRAM) device that is organized as 2M words of 40 bits.
This device is equipped with three chip selects (CS0, CS1, and CS2), a write enable (WE), and an output enable (OE) pin, allowing for significant design flexibility without bus contention.
The device supports a four word burst function using (ADV_LD).
All synchronous inputs are registered on the rising edge of the clock provided the Clock Enable (CEN) input is enabled LOW.
Operations are suspended when CEN is disabled HIGH and the previous operation is extended.
Write operation control signals are WE and six byte write enables BWE[4:0].
All write operations are performed by internal self-timed circuitry.
For easy bank selection, three synchronous Chip Enables (CS0, CS1, CS2) and an asynchronous Output Enable (OE) provide for output tri...


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