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AP60T03GI-HF

Advanced Power Electronics
Part Number AP60T03GI-HF
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Oct 6, 2016
Detailed Description Advanced Power Electronics Corp. AP60T03GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Swit...
Datasheet PDF File AP60T03GI-HF PDF File

AP60T03GI-HF
AP60T03GI-HF


Overview
Advanced Power Electronics Corp.
AP60T03GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Performance ▼ Simple Drive Requirement ▼ Full Isolation Package ▼ RoHS Compliant & Halogen-Free D BVDSS 30V RDS(ON) 12mΩ G ID 45A S Description AP60T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercial-industrial through hole applications.
The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
GD S TO-220CFM(I) Absolute Maximum Ratings@Tj=25oC.
(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 +20 45 32 120 37.
5 -55 to 175 -55 to 175 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 65 Units ℃/W ℃/W 1 201409031 AP60T03GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance2 Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reve...



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