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AP83T03GJB

Advanced Power Electronics
Part Number AP83T03GJB
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Oct 6, 2016
Detailed Description Advanced Power Electronics Corp. AP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resi...
Datasheet PDF File AP83T03GJB PDF File

AP83T03GJB
AP83T03GJB

Overview
Advanced Power Electronics Corp.
AP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted.
BVDSS RDS(ON) ID 30V 6mΩ 75A GD S TO-251S(JB) Absolute Maximum Rati...


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